IndiumV3, Main, Repository, bibRecord, 000017

The electrical and optical properties of Cu-doped In2O3 thin films

Identifieur interne : 000017 ( Main/Repository ); précédent : 000016; suivant : 000018

The electrical and optical properties of Cu-doped In2O3 thin films

Auteurs : RBID : Pascal:14-0095735

Descripteurs français

Pascal (Inist)
- Propriété électrique, Propriété optique, Dopage, Couche mince, Réseau cubique, Orientation préférentielle, Conductivité électrique, Compensation, Bande interdite photonique, Transition métal isolant, Oxyde d'indium, Cuivre, In2O3, Substrat verre, Substrat silicium, 7350, 7866, 7867, 6146.
Wicri :
- concept : Dopage, Cuivre.

English descriptors

KwdEn :
- Compensation, Copper, Cubic lattices, Doping, Electrical conductivity, Electrical properties, Indium oxide, Metal-insulator transition, Optical properties, Photonic band gap, Preferred orientation, Thin films.

Abstract

To study the effect of Cu doping, In₂O₃ and Cu-doped In₂O₃ films were deposited on K9 glass and Si substrates with the same experimental parameters. All the films were found to be body centered cubic and have the same preferred orientation. No secondary phases were detected in Cu-doped In₂O₃. The atomic ratio of Cu to Cu plus In was approximately 18% in Cu-doped In₂O₃ films which were found to be n-type. After Cu doping, the resistivity of the films increased by 3 to 4 orders of magnitude and the film with higher Cu content had larger resistivity, due to compensation. Cu doping is found to widen the optical band gap of In₂O₃ films, possibly due to a metal-insulator transition.

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Pascal:14-0095735

Le document en format XML

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O<sub>3 </sub>
thin films</title>
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<author><name>XUE ZHONG</name>
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<author><name sortKey="Tian, Xiao Qing" uniqKey="Tian X">Xiao-Qing Tian</name>
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<author><name sortKey="Jing, Shou Yong" uniqKey="Jing S">Shou-Yong Jing</name>
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<author><name sortKey="Huang, Long Biao" uniqKey="Huang L">Long-Biao Huang</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Center of Super-Diamond and Advanced Films (COSDAF)and Department of Physics and Materials Science, City University of Hong Kong</s1>
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<author><name sortKey="Roy, V A L" uniqKey="Roy V">V. A. L. Roy</name>
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<s2>Kowloon Tong</s2>
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<country>Hong Kong</country>
<wicri:noRegion>Kowloon Tong</wicri:noRegion>
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<author><name sortKey="Zhang, Dong Ping" uniqKey="Zhang D">Dong-Ping Zhang</name>
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<author><name>PING FAN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technology, Shenzhen University</s1>
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<author><name sortKey="Luo, Jing Tin" uniqKey="Luo J">Jing-Tin Luo</name>
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<author><name sortKey="Zheng, Zhuang Hao" uniqKey="Zheng Z">Zhuang-Hao Zheng</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technology, Shenzhen University</s1>
<s2>Shenzhen, 518060</s2>
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</author>
<author><name sortKey="Liang, Guang Xing" uniqKey="Liang G">Guang-Xing Liang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technology, Shenzhen University</s1>
<s2>Shenzhen, 518060</s2>
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</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">14-0095735</idno>
<date when="2014">2014</date>
<idno type="stanalyst">PASCAL 14-0095735 INIST</idno>
<idno type="RBID">Pascal:14-0095735</idno>
<idno type="wicri:Area/Main/Corpus">000033</idno>
<idno type="wicri:Area/Main/Repository">000017</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Compensation</term>
<term>Copper</term>
<term>Cubic lattices</term>
<term>Doping</term>
<term>Electrical conductivity</term>
<term>Electrical properties</term>
<term>Indium oxide</term>
<term>Metal-insulator transition</term>
<term>Optical properties</term>
<term>Photonic band gap</term>
<term>Preferred orientation</term>
<term>Thin films</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Propriété électrique</term>
<term>Propriété optique</term>
<term>Dopage</term>
<term>Couche mince</term>
<term>Réseau cubique</term>
<term>Orientation préférentielle</term>
<term>Conductivité électrique</term>
<term>Compensation</term>
<term>Bande interdite photonique</term>
<term>Transition métal isolant</term>
<term>Oxyde d'indium</term>
<term>Cuivre</term>
<term>In2O3</term>
<term>Substrat verre</term>
<term>Substrat silicium</term>
<term>7350</term>
<term>7866</term>
<term>7867</term>
<term>6146</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term>
<term>Cuivre</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">To study the effect of Cu doping, In<sub>2</sub>
O<sub>3</sub>
 and Cu-doped In<sub>2</sub>
O<sub>3</sub>
 films were deposited on K9 glass and Si substrates with the same experimental parameters. All the films were found to be body centered cubic and have the same preferred orientation. No secondary phases were detected in Cu-doped In<sub>2</sub>
O<sub>3</sub>
. The atomic ratio of Cu to Cu plus In was approximately 18% in Cu-doped In<sub>2</sub>
O<sub>3</sub>
 films which were found to be n-type. After Cu doping, the resistivity of the films increased by 3 to 4 orders of magnitude and the film with higher Cu content had larger resistivity, due to compensation. Cu doping is found to widen the optical band gap of In<sub>2</sub>
O<sub>3</sub>
 films, possibly due to a metal-insulator transition.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0>
</fA01>
<fA02 i1="01"><s0>THSFAP</s0>
</fA02>
<fA03 i2="1"><s0>Thin solid films</s0>
</fA03>
<fA05><s2>556</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>The electrical and optical properties of Cu-doped In<sub>2</sub>
O<sub>3 </sub>
thin films</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>FAN YE</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>CAI (Xing-Min)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>XUE ZHONG</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>TIAN (Xiao-Qing)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>JING (Shou-Yong)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>HUANG (Long-Biao)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>ROY (V. A. L.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>ZHANG (Dong-Ping)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>PING FAN</s1>
</fA11>
<fA11 i1="10" i2="1"><s1>LUO (Jing-Tin)</s1>
</fA11>
<fA11 i1="11" i2="1"><s1>ZHENG (Zhuang-Hao)</s1>
</fA11>
<fA11 i1="12" i2="1"><s1>LIANG (Guang-Xing)</s1>
</fA11>
<fA14 i1="01"><s1>School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technology, Shenzhen University</s1>
<s2>Shenzhen, 518060</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>The Institute of Optoelectronics, Shenzhen University</s1>
<s2>Shenzhen, 518060</s2>
<s3>CHN</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Center of Super-Diamond and Advanced Films (COSDAF)and Department of Physics and Materials Science, City University of Hong Kong</s1>
<s2>Kowloon Tong</s2>
<s3>HKG</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</fA14>
<fA20><s1>44-47</s1>
</fA20>
<fA21><s1>2014</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
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<fA60><s1>P</s1>
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<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>To study the effect of Cu doping, In<sub>2</sub>
O<sub>3</sub>
 and Cu-doped In<sub>2</sub>
O<sub>3</sub>
 films were deposited on K9 glass and Si substrates with the same experimental parameters. All the films were found to be body centered cubic and have the same preferred orientation. No secondary phases were detected in Cu-doped In<sub>2</sub>
O<sub>3</sub>
. The atomic ratio of Cu to Cu plus In was approximately 18% in Cu-doped In<sub>2</sub>
O<sub>3</sub>
 films which were found to be n-type. After Cu doping, the resistivity of the films increased by 3 to 4 orders of magnitude and the film with higher Cu content had larger resistivity, due to compensation. Cu doping is found to widen the optical band gap of In<sub>2</sub>
O<sub>3</sub>
 films, possibly due to a metal-insulator transition.</s0>
</fC01>
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<fC03 i1="01" i2="3" l="FRE"><s0>Propriété électrique</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Electrical properties</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Propriété optique</s0>
<s5>02</s5>
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<fC03 i1="02" i2="3" l="ENG"><s0>Optical properties</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Dopage</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Doping</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Doping</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Thin films</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Réseau cubique</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Cubic lattices</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Orientation préférentielle</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Preferred orientation</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Orientación preferencial</s0>
<s5>06</s5>
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<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Compensation</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Compensation</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Bande interdite photonique</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Photonic band gap</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Transition métal isolant</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Metal-insulator transition</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Cuivre</s0>
<s2>NC</s2>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Copper</s0>
<s2>NC</s2>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>In2O3</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Substrat verre</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Substrat silicium</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>7350</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>7866</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>7867</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>6146</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>132</s1>
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The electrical and optical properties of Cu-doped In2O3 thin films

The electrical and optical properties of Cu-doped In2O3 thin films

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